BCR133SH6433XTMA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR133SH6433XTMA1 is a dual NPN pre-biased bipolar transistor designed for surface mount applications. This device features a breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 130MHz. The integrated base resistors (R1 and R2) are both 10kOhms, simplifying circuit design. It offers a minimum DC current gain (hFE) of 30 at 5mA and 5V, and a Vce saturation of 300mV at 500µA and 10mA. The component is supplied in a PG-SOT363-PO package, equivalent to SOT-363, and is available on tape and reel. This transistor array is suitable for use in various industrial and consumer electronics applications requiring simplified biasing and switching functions. The maximum power dissipation is 250mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
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