BCR133SE6433BTMA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Infineon Technologies BCR133SE6433BTMA1 is a dual, pre-biased NPN bipolar transistor. This surface mount device, housed in a PG-SOT363-PO package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 130MHz and a maximum power dissipation of 250mW. The integrated base resistors, R1 and R2, are both specified at 10kOhms, contributing to simplified circuit design. This component finds application in various industrial and consumer electronics sectors, including automotive and telecommunications. The DC current gain (hFE) is a minimum of 30 at 5mA collector current and 5V collector-emitter voltage. Vce saturation is 300mV maximum at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BCR129SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR10PNH6327XTSA1
TRANS NPN/PNP PREBIAS SOT363
BCR35PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363
