BCR133SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR133SE6327BTSA1 is a dual NPN pre-biased bipolar transistor array. This surface mount component, housed in a PG-SOT363-PO package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 130MHz and a maximum power dissipation of 250mW. Each transistor includes integrated base resistors, R1 and R2, both specified at 10kOhms, simplifying circuit design. The device exhibits a minimum DC current gain (hFE) of 30 at 5mA and 5V, with a Vce saturation of 300mV at 500µA and 10mA. This component is commonly utilized in industrial automation and consumer electronics applications where simplified biasing and reduced component count are advantageous. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
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