BCR129SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR129SH6327XTSA1 is a dual, pre-biased NPN bipolar transistor housed in a PG-SOT363-PO package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 150MHz and a power dissipation of 250mW, it features integrated base resistors of 10kOhms. Typical DC current gain (hFE) is 120 at 5mA and 5V, with a saturation voltage (Vce Sat) of 300mV at 500µA and 10mA. This device is suitable for applications in industrial automation and consumer electronics. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | PG-SOT363-PO |
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