BCR129SE6327HTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR129SE6327HTSA1 is a dual NPN pre-biased bipolar transistor in a PG-SOT363-PO package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. With a transition frequency of 150MHz and a maximum power dissipation of 250mW, it features integrated base resistors of 10kOhms. The minimum DC current gain (hFE) is 120 at 5mA collector current and 5V Vce. Saturation voltage is specified at 300mV at 500µA base current and 10mA collector current. This component is suitable for surface mount applications and is supplied on tape and reel. It finds utility in various industrial and consumer electronics, including signal conditioning and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | PG-SOT363-PO |
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