BCR116SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR116SH6327XTSA1 is a dual NPN pre-biased bipolar transistor array. This surface mount device, housed in a PG-SOT363-PO package (6-VSSOP, SC-88, SOT-363), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors of 4.7kOhms (R1) and 47kOhms (R2). The device achieves a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce, with a transition frequency of 150MHz. Maximum power dissipation is 250mW. Saturation voltage (Vce Sat) is 300mV at 500µA base current and 10mA collector current. Applications include industrial automation, consumer electronics, and telecommunications. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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