BCR116SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR116SE6327BTSA1 is a dual NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a PG-SOT363-PO package and is supplied on tape and reel. With a collector-emitter voltage (Vce) breakdown of up to 50V and a maximum collector current (Ic) of 100mA, it offers a transition frequency of 150MHz. The integrated base resistors are specified as 4.7kOhms (R1) and 47kOhms (R2), providing a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. The power dissipation is rated at 250mW. This device is commonly utilized in industrial and consumer electronics for switching and amplification applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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