BCR10PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR10PNE6327BTSA1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a single PG-SOT363-PO package. This surface mount device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 130MHz and a power dissipation of 250mW, it is suitable for applications requiring minimal external biasing components. The internal base resistors are specified at 10kOhms for both configurations. This component finds application in various industrial and consumer electronics, including signal switching and amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |