BCR10PNB6327XT
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR10PNB6327XT is a dual pre-biased bipolar transistor featuring one NPN and one PNP transistor in a single PG-SOT363-PO package. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a typical transition frequency of 130MHz and a power dissipation of 250mW. Each transistor includes integrated base resistors, specifically 10kOhms for R1 and 10kOhms for R2, simplifying circuit design and reducing component count. The saturation voltage (Vce Sat) is rated at a maximum of 300mV at 500µA base current and 10mA collector current. With a DC current gain (hFE) of at least 30 at 5mA collector current and 5V Vce, this component is suitable for applications in consumer electronics and industrial control systems where space-constrained designs and simplified biasing are critical. The BCR10PNB6327XT is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
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