BCR108SH6433XTMA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR108SH6433XTMA1 is a dual NPN pre-biased bipolar transistor designed for surface mount applications. This component features a breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 170MHz. Each transistor within the PG-SOT363-PO package includes integrated base resistors, specified as 2.2kOhms (R1) and 47kOhms (R2), facilitating simplified circuit design. The device offers a minimum DC current gain (hFE) of 70 at 5mA and 5V, and a Vce saturation of 300mV at 500µA and 10mA. With a maximum power dissipation of 250mW, it is suitable for use in digital logic circuits and general-purpose switching applications across various industries. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 170MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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