BCR108SE6433HTMA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR108SE6433HTMA1 is a dual pre-biased NPN bipolar transistor array designed for surface mounting in a PG-SOT363-PO package. This component features a collector current (Ic) capability of up to 100mA and a collector-emitter breakdown voltage (Vce) of 50V. It offers a transition frequency (fT) of 170MHz and a maximum power dissipation of 250mW. Each transistor within the array incorporates integrated base resistors (R1) of 2.2kOhms and emitter base resistors (R2) of 47kOhms, providing a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V collector-emitter voltage. The Vce saturation voltage is specified at 300mV for a base current of 500µA and collector current of 10mA. This device is commonly utilized in industrial and telecommunications applications requiring compact, high-performance switching and amplification. The component is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 170MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |