BCR108SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR108SE6327BTSA1 is a pre-biased bipolar transistor array featuring two NPN transistors. This dual-transistor configuration, housed in a PG-SOT363-PO package, offers a collector current of up to 100mA and a collector-emitter breakdown voltage of 50V. The device boasts a transition frequency of 170MHz and a maximum power dissipation of 250mW. Integrated base resistors of 2.2kOhms (R1) and emitter base resistors of 47kOhms (R2) simplify circuit design by eliminating the need for external biasing components. It exhibits a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V Vce. Saturation voltage is specified at 300mV maximum for 500µA base current and 10mA collector current. This component is commonly found in industrial automation, consumer electronics, and automotive applications. Supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 170MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |