BCR08PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
Infineon Technologies BCR08PNE6327BTSA1 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a PG-SOT363-PO package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors include a 2.2kO for the NPN and a 47kO for the PNP, facilitating simpler circuit designs. With a minimum DC current gain (hFE) of 70 at 5mA and 5V, and a transition frequency of 170MHz, this device is suitable for applications requiring minimal external components. The maximum power dissipation is 250mW. This transistor array finds application in consumer electronics and industrial automation. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 170MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BCR129SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363
BCR10PNH6327XTSA1
TRANS NPN/PNP PREBIAS SOT363
BCR35PNE6327BTSA1
TRANS NPN/PNP PREBIAS SOT363
