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BCR 48PN H6727

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BCR 48PN H6727

TRANS NPN/PNP PREBIAS SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

Infineon Technologies BCR-48PN-H6727 is a pre-biased dual bipolar transistor array featuring one NPN and one PNP transistor in a PG-SOT363-PO package. This surface mount component offers a collector current capability of 70mA for the NPN and 100mA for the PNP, with a maximum power dissipation of 250mW. The NPN transistor exhibits a minimum DC current gain (hFE) of 70 at 5mA/5V and a transition frequency of 100MHz. The PNP transistor provides a transition frequency of 200MHz. Integrated base resistors of 47kOhms are present for both transistors, with an additional emitter base resistor of 47kOhms for the PNP. Collector emitter breakdown voltage is rated at 50V. Typical applications include general-purpose switching and amplification in consumer electronics and industrial control systems. The component is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)70mA, 100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Frequency - Transition100MHz, 200MHz
Resistor - Base (R1)47kOhms, 2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackagePG-SOT363-PO

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