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BCR 22PN H6727

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BCR 22PN H6727

TRANS NPN/PNP PREBIAS SOT363

Manufacturer: Infineon Technologies

Categories: Bipolar Transistor Arrays, Pre-Biased

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Infineon Technologies BCR-22PN-H6727 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistors exhibit a minimum DC current gain (hFE) of 50 at 5mA collector current and 5V Vce. With a transition frequency of 130MHz, it is suitable for applications requiring moderate switching speeds. The integrated base resistors are 22kOhms for both the NPN and PNP sections. This device is supplied in a compact PG-SOT363-PO package, designed for surface mounting, and comes in a Tape & Reel (TR) configuration. Applications include general-purpose switching and amplification in consumer electronics, industrial control systems, and automotive electronics. The maximum power dissipation is 250mW. Saturation voltage (Vce(sat)) is a maximum of 300mV at 500µA base current and 10mA collector current.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 5V
Frequency - Transition130MHz
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackagePG-SOT363-PO

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