BCR 133S H6444
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR-133S-H6444 is a pre-biased dual NPN bipolar transistor array. This surface-mount component, housed in a PG-SOT363-PO package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 130MHz and a maximum power dissipation of 250mW. The integrated base resistors are specified at 10kOhms for both R1 and R2. This device is suitable for applications requiring a compact, pre-biased transistor solution, commonly found in industrial and automotive electronic systems. The minimum DC current gain (hFE) is 30 at 5mA collector current and 5V collector-emitter voltage, with a Vce saturation of 300mV at 500µA base current and 10mA collector current. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 130MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | PG-SOT363-PO |
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