BCR 116S H6727
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: Infineon Technologies
Categories: Bipolar Transistor Arrays, Pre-Biased
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Infineon Technologies BCR-116S-H6727 is a dual NPN pre-biased bipolar transistor. This device features integrated base resistors, R1 of 4.7kOhms and R2 of 47kOhms, simplifying circuit design and reducing component count. It operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor offers a minimum DC current gain (hFE) of 70 at 5mA collector current and 5V collector-emitter voltage, with a transition frequency of 150MHz. The saturation voltage (Vce Sat) is specified at a maximum of 300mV with a base current of 500µA and a collector current of 10mA. This component is supplied in a PG-SOT363-PO surface mount package, commonly known as SOT-363 or SC-88, and is provided in Tape & Reel packaging. The maximum power dissipation is 250mW. Applications include general-purpose switching and amplification in consumer electronics and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Frequency - Transition | 150MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | PG-SOT363-PO |
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