BGB 540 E6327
RF TRANS NPN 3.5V SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BGB-540-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a typical gain of 16dB to 17.5dB and a low noise figure, ranging from 1.3dB to 2dB across the 900MHz to 1.8GHz spectrum. It is packaged in a PG-SOT343-3D (SC-82A, SOT-343) surface-mount configuration, suitable for automated assembly. The BGB-540-E6327 operates with a maximum collector current of 30mA and a collector-emitter breakdown voltage of 3.5V, with a power dissipation capability of 120mW. It is rated for operation up to 150°C (TJ). This transistor finds application in various wireless communication systems and RF front-end circuitry. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 16dB ~ 17.5dB |
| Power - Max | 120mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT343-3D |
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