BFY193PZZZA1
RF TRANS NPN 12V 7.5GHZ MICRO X1Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFY193PZZZA1 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It features a transition frequency of 7.5GHz, enabling reliable performance in demanding RF circuits. The device exhibits a typical gain ranging from 12.5dB to 13.5dB and a low noise figure, with values of 2.3dB to 2.9dB at 2GHz.
The BFY193PZZZA1 is housed in a compact MICRO-X1 surface mount package, suitable for space-constrained designs. Its maximum power dissipation is rated at 580mW, and it operates across a wide temperature range, with a junction temperature rating of 200°C. This transistor finds utility in various RF systems, including telecommunications infrastructure, satellite communications, and electronic test equipment. The DC current gain (hFE) is a minimum of 50 at 30mA and 8V. The component is supplied in box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | MICRO-X1 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 12.5dB ~ 13.5dB |
| Power - Max | 580mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 30mA, 8V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 2.3dB ~ 2.9dB @ 2GHz |
| Supplier Device Package | MICRO-X1 |
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