BFS17WH6327XTSA1
RF TRANS NPN 15V 1.4GHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFS17WH6327XTSA1 is an NPN RF bipolar transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA. With a transition frequency of 1.4GHz and a maximum power dissipation of 280mW, it is suitable for use in RF amplifiers and switching circuits. The device exhibits a typical noise figure of 3.5dB to 5dB at 800MHz and a minimum DC current gain (hFE) of 40 at 2mA, 1V. It is provided in a PG-SOT323 surface-mount package, supplied on tape and reel. The operating junction temperature range extends to 150°C. This transistor is commonly utilized in telecommunications, wireless infrastructure, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
| Frequency - Transition | 1.4GHz |
| Noise Figure (dB Typ @ f) | 3.5dB ~ 5dB @ 800MHz |
| Supplier Device Package | PG-SOT323 |