BFS17WE6327HTSA1
RF TRANS NPN 15V 1.4GHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFS17WE6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in a PG-SOT323 package, offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA. Its transition frequency reaches 1.4GHz, with a typical noise figure of 3.5dB to 5dB at 800MHz. The device boasts a minimum DC current gain (hFE) of 40 at 2mA and 1V, and a maximum power dissipation of 280mW. Operating at temperatures up to 150°C (TJ), this transistor is commonly utilized in wireless communication systems and RF front-end circuitry. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
| Frequency - Transition | 1.4GHz |
| Noise Figure (dB Typ @ f) | 3.5dB ~ 5dB @ 800MHz |
| Supplier Device Package | PG-SOT323 |
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