BFS17SH6327XTSA1
RF TRANS 2NPN 15V 1.4GHZ SOT363Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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The Infineon Technologies BFS17SH6327XTSA1 is a dual NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA, this device offers a transition frequency of 1.4GHz. With a maximum power dissipation of 280mW, it is suitable for surface mount applications, utilizing the PG-SOT363-PO package. The BFS17SH6327XTSA1 exhibits a typical DC current gain of 40 at 2mA and 1V, and a noise figure ranging from 3dB to 5dB at 800MHz. This component is commonly found in wireless communications and general-purpose RF amplification circuits. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
| Frequency - Transition | 1.4GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 5dB @ 800MHz |
| Supplier Device Package | PG-SOT363-PO |
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