BFS17SE6327HTSA1
RF TRANS 2NPN 15V 1.4GHZ SOT363Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFS17SE6327HTSA1 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PG-SOT363-PO package, operates at a transition frequency of 1.4GHz and supports a collector-emitter breakdown voltage of 15V. With a maximum collector current of 25mA and a power dissipation of 280mW, it offers a minimum DC current gain of 40 at 2mA and 1V. The noise figure typically ranges from 3dB to 5dB at 800MHz, making it suitable for demanding RF circuitry. Operating temperatures can reach up to 150°C (TJ). This transistor is commonly utilized in wireless communication systems and consumer electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 280mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2mA, 1V |
| Frequency - Transition | 1.4GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 5dB @ 800MHz |
| Supplier Device Package | PG-SOT363-PO |
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