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BFS17PE6752HTSA1

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BFS17PE6752HTSA1

RF TRANS NPN SOT23-3

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BFS17PE6752HTSA1 is an NPN bipolar RF transistor designed for surface mount applications. This component operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA. It features a transition frequency of 1.4GHz and a maximum power dissipation of 280mW. The device exhibits a typical DC current gain (hFE) of 40 at 2mA and 1V, and a noise figure of 3.5dB at 800MHz. Packaged in the PG-SOT23 (TO-236-3, SC-59, SOT-23-3) format, it is supplied on a tape and reel. The BFS17PE6752HTSA1 is suitable for applications requiring high-frequency amplification and switching, commonly found in wireless communication systems and RF front-end modules. Its operating temperature range extends up to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max280mW
Current - Collector (Ic) (Max)25mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V
Frequency - Transition1.4GHz
Noise Figure (dB Typ @ f)3.5dB @ 800MHz
Supplier Device PackagePG-SOT23

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