BFS 483 E6327
RF TRANS 2 NPN 12V 8GHZ SOT363-6Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
Quality Control: Learn More
Infineon Technologies BFS-483-E6327 is a dual NPN bipolar RF transistor designed for high-frequency applications. This SOT-363 packaged component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA. It offers a typical transition frequency of 8GHz and a gain of 19dB. The noise figure is rated at 0.9dB to 1.4dB across the 900MHz to 1.8GHz frequency range. With a maximum power dissipation of 450mW and a minimum DC current gain (hFE) of 70 at 15mA and 8V, this device is suitable for demanding RF circuitry. The BFS-483-E6327 is supplied in a Tape & Reel (TR) package and is intended for surface mounting. This component finds application in wireless communication systems and other high-frequency designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Gain | 19dB |
| Power - Max | 450mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 15mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT363-PO |