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BFS 481 E6327

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BFS 481 E6327

RF TRANS 2 NPN 12V 8GHZ SOT363-6

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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The Infineon Technologies BFS-481-E6327 is a dual NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a PG-SOT363-PO package, operates at up to 12V with a maximum collector current of 20mA. It features a transition frequency of 8GHz and offers a typical gain of 20dB. The noise figure is rated at 0.9dB to 1.2dB across the 900MHz to 1.8GHz range. With a maximum power dissipation of 175mW and an operating junction temperature of 150°C, this device is suitable for demanding RF circuitry. Applications include mobile infrastructure, wireless communication systems, and general-purpose RF amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain20dB
Power - Max175mW
Current - Collector (Ic) (Max)20mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 8V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device PackagePG-SOT363-PO

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