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BFS 466L6 E6327

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BFS 466L6 E6327

RF TRANS 2 NPN 5V/9V 14GHZ TSLP

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BFS-466L6-E6327 is a dual NPN bipolar RF transistor designed for high-frequency applications. Featuring two independent NPN transistor cells, this component offers transition frequencies of 22GHz and 14GHz, making it suitable for demanding RF front-end designs. The device supports collector-emitter breakdown voltages of 5V and 9V, with maximum collector currents of 50mA and 35mA respectively. Typical DC current gain (hFE) is 90 at specified current and voltage conditions. Power dissipation capabilities are rated at 200mW and 210mW. The BFS-466L6-E6327 is supplied in a TSLP-6-1 surface mount package, ideal for miniaturized board layouts. Operating temperature range extends to 150°C (TJ). This component finds application in wireless infrastructure, satellite communications, and radar systems where high-frequency performance and reliability are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-XFDFN
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain12dB ~ 17dB
Power - Max200mW, 210mW
Current - Collector (Ic) (Max)50mA, 35mA
Voltage - Collector Emitter Breakdown (Max)5V, 9V
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 20mA, 3V / 90 @ 15mA, 3V
Frequency - Transition22GHz, 14GHz
Noise Figure (dB Typ @ f)1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device PackageTSLP-6-1

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