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BFS 460L6 E6327

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BFS 460L6 E6327

RF TRANS 2NPN 5.8V 22GHZ TSLP-6

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BFS-460L6-E6327 is a dual 2 NPN bipolar RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 5.8V and a maximum collector current of 50mA. With a transition frequency of 22GHz, this device offers a gain range of 10dB to 14.5dB and a typical noise figure of 1.1dB to 1.4dB across the 1.8GHz to 3GHz range. The minimum DC current gain is 90 at 20mA and 3V. This component is supplied in a TSLP-6-1 package, a 6-XFDFN surface mount configuration, and is delivered on tape and reel. It is rated for a maximum power dissipation of 200mW and an operating temperature of 150°C. Applications include wireless communication systems and other high-frequency electronic designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-XFDFN
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain10dB ~ 14.5dB
Power - Max200mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 20mA, 3V
Frequency - Transition22GHz
Noise Figure (dB Typ @ f)1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Supplier Device PackageTSLP-6-1

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