BFR840L3RHESDE6327XTSA1
RF TRANS NPN 2.6V 75GHZ TSLP-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR840L3RHESDE6327XTSA1 is an NPN RF bipolar transistor designed for high-frequency applications. This component features a 75GHz transition frequency and a typical gain of 27dB, making it suitable for demanding RF front-end designs. Operating with a collector-emitter breakdown voltage of 2.6V and a maximum collector current of 35mA, it offers 75mW of maximum power dissipation. The transistor exhibits a low noise figure of 0.5dB at 450MHz and a minimum DC current gain (hFE) of 150 at 10mA collector current and 1.8V collector-emitter voltage. It is packaged in a PG-TSLP-3 (SC-101, SOT-883) surface mount configuration, supplied on tape and reel. The BFR840L3RHESDE6327XTSA1 is utilized in wireless communication systems, radar applications, and other high-frequency signal processing domains. Its operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 27dB |
| Power - Max | 75mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 2.6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V |
| Frequency - Transition | 75GHz |
| Noise Figure (dB Typ @ f) | 0.5dB @ 450MHz |
| Supplier Device Package | PG-TSLP-3 |