BFR750L3RHE6327XTSA1
RF TRANS NPN 4.7V 37GHZ TSLP-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR750L3RHE6327XTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates with a collector-emitter breakdown voltage of 4.7V and a maximum collector current of 90mA. It exhibits a transition frequency of 37GHz and offers a typical gain of 21dB. The device features a low noise figure, ranging from 0.6dB to 1.1dB across the 1.8GHz to 6GHz frequency spectrum. With a maximum power dissipation of 360mW and an operating junction temperature of 150°C, it is supplied in a PG-TSLP-3 package, presented on a tape and reel. Applications for this component are found in wireless communication systems and high-frequency amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 21dB |
| Power - Max | 360mW |
| Current - Collector (Ic) (Max) | 90mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 60mA, 3V |
| Frequency - Transition | 37GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-TSLP-3 |
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