BFR740L3RHE6327XTSA1
RF TRANS NPN 4.7V 42GHZ TSLP-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR740L3RHE6327XTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a 4.7V collector-emitter breakdown voltage and a maximum collector current of 30mA, this device achieves a transition frequency of 42GHz. With a typical gain of 24.5dB and a low noise figure ranging from 0.5dB to 0.8dB across the 1.8GHz to 6GHz spectrum, it is suitable for demanding RF front-end designs. The component operates up to a maximum power of 160mW and can withstand an operating junction temperature of 150°C. Supplied in a PG-TSLP-3 package, this surface-mount transistor is commonly utilized in wireless communication systems and radar applications. It is delivered on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 24.5dB |
| Power - Max | 160mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 25mA, 3V |
| Frequency - Transition | 42GHz |
| Noise Figure (dB Typ @ f) | 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz |
| Supplier Device Package | PG-TSLP-3 |
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