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BFR720L3RHE6327XTSA1

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BFR720L3RHE6327XTSA1

RF TRANS NPN 4.7V 45GHZ TSLP-3

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFR720L3RHE6327XTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 4.7V and a maximum collector current of 20mA. With a transition frequency of 45GHz and a typical gain of 24dB, this component is well-suited for demanding RF designs. The noise figure is rated at a low 0.5dB to 0.8dB across the 1.8GHz to 6GHz frequency range. This transistor operates at a maximum power dissipation of 80mW and can withstand junction temperatures up to 150°C. It is provided in a PG-TSLP-3 package, which is a surface mount type. The BFR720L3RHE6327XTSA1 is commonly utilized in wireless communication infrastructure, satellite communications, and other advanced RF systems. The minimum DC current gain (hFE) is 160 at 13mA and 3V. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain24dB
Power - Max80mW
Current - Collector (Ic) (Max)20mA
Voltage - Collector Emitter Breakdown (Max)4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 13mA, 3V
Frequency - Transition45GHz
Noise Figure (dB Typ @ f)0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Supplier Device PackagePG-TSLP-3

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