BFR183WH6327XTSA1
RF TRANS NPN 12V 8GHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR183WH6327XTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in a PG-SOT323 package, operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA. It exhibits a typical gain of 18.5dB and a transition frequency of 8GHz, making it suitable for demanding RF circuitry. The noise figure ranges from 0.9dB to 1.4dB across the 900MHz to 1.8GHz spectrum. With a maximum power dissipation of 450mW and an operating junction temperature of 150°C, this transistor is engineered for reliability in telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 18.5dB |
| Power - Max | 450mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 15mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT323 |