BFR 949T E6327
RF TRANS NPN 10V 9GHZ SC75Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-949T-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 35mA. It exhibits a transition frequency of 9GHz and delivers a typical gain of 20dB. The transistor features a low noise figure, ranging from 1dB to 2.5dB at 1GHz, and a minimum DC current gain (hFE) of 100 at 5mA and 6V. With a maximum power dissipation of 250mW and an operating junction temperature of 150°C, the BFR-949T-E6327 is packaged in a PG-SC75-3D (SC-75, SOT-416) and supplied on tape and reel. This component is suitable for use in various RF circuitry, including telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 20dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 2.5dB @ 1GHz |
| Supplier Device Package | PG-SC75-3D |
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