BFR 949L3 E6327
RF TRANS NPN 10V 9GHZ TSLP-3-1Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-949L3-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device features a collector-emitter breakdown voltage of 10V and a maximum collector current of 50mA. It operates up to a transition frequency of 9GHz, offering a typical gain of 21.5dB. The noise figure is rated at 1dB to 2.5dB at 1GHz. With a maximum power dissipation of 250mW and an operating junction temperature of up to 150°C, this component is suitable for demanding RF front-end designs in sectors such as wireless communications and satellite technology. The device is supplied in a PG-TSLP-3-1 package, presented on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 21.5dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 2.5dB @ 1GHz |
| Supplier Device Package | PG-TSLP-3-1 |
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