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BFR 93AW E6327

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BFR 93AW E6327

RF TRANS NPN 12V 6GHZ SOT323-3

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFR-93AW-E6327 is an NPN bipolar RF transistor designed for high-frequency amplification. This surface mount component, housed in a PG-SOT323 package (SC-70), features a collector-emitter breakdown voltage of 12V and a maximum collector current of 90mA. With a transition frequency of 6GHz and a maximum power dissipation of 300mW, it offers a gain range of 10.5dB to 15.5dB. Typical noise figures are between 1.5dB and 2.6dB across the 900MHz to 1.8GHz frequency spectrum. The DC current gain (hFE) is a minimum of 70 at 30mA and 8V. This device is suitable for applications in wireless communication infrastructure and other RF signal processing systems. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain10.5dB ~ 15.5dB
Power - Max300mW
Current - Collector (Ic) (Max)90mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 30mA, 8V
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device PackagePG-SOT323

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