BFR 193W E6327
RF TRANS NPN 12V 8GHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-193W-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 12V collector-emitter breakdown voltage and a maximum collector current of 80mA. With a transition frequency of 8GHz and a power dissipation of 580mW, it offers a typical gain range of 10.5dB to 16dB. The noise figure is rated at 1dB to 1.6dB across the 900MHz to 1.8GHz frequency range. Housed in a PG-SOT323 (SC-70) surface mount package, this transistor is supplied on tape and reel. It is suitable for use in wireless communication systems and other RF circuitry, operating at temperatures up to 150°C (TJ). Minimum DC current gain (hFE) is 70 at 30mA and 8V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10.5dB ~ 16dB |
| Power - Max | 580mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT323 |
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