BFR 183T E6327
RF TRANS NPN 12V 8GHZ SC75Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-183T-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 65mA. With a transition frequency of 8GHz and a typical gain of 19.5dB, it is suitable for demanding RF circuits. The noise figure is specified at a typical 1.2dB to 2dB across the 900MHz to 1.8GHz range. Operating at a maximum junction temperature of 150°C, the BFR-183T-E6327 is housed in a PG-SC75-3D package, a surface mount SC-75 (SOT-416) variant. This device is commonly utilized in wireless communication infrastructure and broadband applications. The component is supplied on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 19.5dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 65mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 15mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SC75-3D |
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