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BFR 182W E6327

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BFR 182W E6327

RF TRANS NPN 12V 8GHZ SOT323-3

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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Infineon Technologies BFR-182W-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This device features a 12V collector-emitter breakdown voltage and a maximum collector current of 35mA. With a transition frequency of 8GHz and a typical gain of 19dB at 900MHz, it is suitable for demanding RF circuits. The noise figure ranges from 0.9dB to 1.3dB across 900MHz to 1.8GHz, ensuring excellent signal integrity. The transistor operates at a maximum power of 250mW and can withstand junction temperatures up to 150°C. Supplied in the PG-SOT323 package, this component is commonly utilized in wireless communication systems and RF amplification stages. The minimum DC current gain (hFE) is 70 at 10mA and 8V. This component is delivered on Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain19dB
Power - Max250mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 8V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device PackagePG-SOT323

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