BFR 182T E6327
RF TRANS NPN 12V 8GHZ SC75Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-182T-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a 12V collector-emitter breakdown voltage and a maximum collector current of 35mA, this device offers a transition frequency of 8GHz. It delivers a typical gain of 20dB with a minimum DC current gain (hFE) of 50 at 10mA and 8V. The noise figure is rated between 1.2dB and 1.9dB across the 900MHz to 1.8GHz frequency range. With a maximum power dissipation of 250mW, the BFR-182T-E6327 is housed in a PG-SC75-3D (SC-75, SOT-416) surface-mount package, supplied on tape and reel. This component finds application in telecommunications and wireless infrastructure. It operates at an ambient temperature up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 20dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SC75-3D |
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