BFR 182 B6663
RF TRANS NPN 12V 8GHZ SOT23-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-182-B6663 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, packaged in a PG-SOT23 (TO-236-3, SC-59), offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 35mA. It features a transition frequency of 8GHz and provides a gain typically ranging from 12dB to 18dB. The noise figure is rated at a low 0.9dB to 1.3dB across a frequency range of 900MHz to 1.8GHz. With a maximum power dissipation of 250mW and an operating junction temperature of 150°C, this component is suitable for use in wireless infrastructure, satellite communications, and point-to-point radio systems. The DC current gain (hFE) is a minimum of 70 at 10mA and 8V. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB ~ 18dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT23 |
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