BFR 181W E6327
RF TRANS NPN 12V 8GHZ SOT323-3Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-181W-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. It features a 12V collector-emitter breakdown voltage and a maximum collector current of 20mA. With a transition frequency of 8GHz and a typical gain of 19dB, this device is suitable for demanding RF amplification stages. The noise figure is notably low, ranging from 0.9dB to 1.2dB across the 900MHz to 1.8GHz frequency band. This component is housed in a PG-SOT323 (SC-70) surface mount package, supplied on tape and reel. Its robust operating temperature range extends to 150°C (TJ), making it a reliable choice for applications in wireless communication infrastructure, satellite systems, and radar technologies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 19dB |
| Power - Max | 175mW |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SOT323 |
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