BFR 181T E6327
RF TRANS NPN 12V 8GHZ SC75Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFR-181T-E6327 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a transition frequency of 8GHz and a maximum collector current of 20mA. The device offers a typical gain of 19.5dB and a minimum DC current gain (hFE) of 50 at 5mA and 8V. Its breakdown voltage is rated at 12V. The BFR-181T-E6327 has a maximum power dissipation of 175mW and a typical noise figure ranging from 1.45dB to 1.8dB across its specified frequency range. The operating junction temperature can reach up to 150°C. This transistor is housed in a PG-SC75-3D package, equivalent to an SC-75 or SOT-416, suitable for surface mount assembly. It is supplied in Tape & Reel packaging. This component finds application in wireless communication modules and RF front-end circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 19.5dB |
| Power - Max | 175mW |
| Current - Collector (Ic) (Max) | 20mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz |
| Supplier Device Package | PG-SC75-3D |
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