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BFR 181 E6780

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BFR 181 E6780

RF TRANS NPN 12V 8GHZ SOT23-3

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

Quality Control: Learn More

Infineon Technologies BFR-181-E6780 is an NPN bipolar RF transistor designed for demanding applications. This SOT-23-3 packaged component offers a 12V collector-emitter breakdown voltage and a maximum collector current of 20mA. It features a transition frequency of 8GHz and provides a typical gain of 18.5dB. The noise figure is notably low, ranging from 0.9dB to 1.2dB across the 900MHz to 1.8GHz frequency band. With a maximum power dissipation of 175mW and an operating junction temperature of 150°C, this device is suitable for high-frequency amplification and switching tasks in wireless infrastructure, telecommunications, and radar systems. The component is supplied on a tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain18.5dB
Power - Max175mW
Current - Collector (Ic) (Max)20mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 8V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device PackagePG-SOT23

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