BFP780H6327XTSA1
RF TRANS NPN 6.1V 900MHZ SOT343Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
Quality Control: Learn More
Infineon Technologies BFP780H6327XTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-343 packaged component offers a collector-emitter breakdown voltage of 6.1V and a maximum collector current of 120mA. With a transition frequency of 900MHz and a typical gain of 27dB at 900MHz, it is suitable for demanding RF circuitry. The device exhibits a low noise figure, ranging from 1.2dB to 2.4dB across the 900MHz to 3.5GHz spectrum. Operating at a maximum power dissipation of 600mW, it is rated for junction temperatures up to 150°C. This transistor is commonly utilized in wireless infrastructure, mobile communications, and other RF front-end designs. Supplied in Tape & Reel packaging, the BFP780H6327XTSA1 features a minimum DC current gain (hFE) of 85 at 90mA and 5V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 27dB |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 120mA |
| Voltage - Collector Emitter Breakdown (Max) | 6.1V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 90mA, 5V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz |
| Supplier Device Package | PG-SOT343-4-1 |
Request a Quote
Clients Also Buy
BFS 17P E6433
RF TRANS NPN 15V 1.4GHZ SOT23-3
BFR 182T E6327
RF TRANS NPN 12V 8GHZ SC75
BF799WE6327BTSA1
RF TRANS NPN 20V 800MHZ SOT323-3
