BFP740E6327HTSA1
RF TRANS NPN 4.7V 42GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP740E6327HTSA1 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device offers a collector-emitter breakdown voltage of 4.7V and a maximum collector current of 30mA. It features a transition frequency of 42GHz and a typical gain of 27dB. The transistor exhibits a low noise figure, ranging from 0.5dB to 0.85dB across the 1.8GHz to 6GHz frequency band. With a maximum power dissipation of 160mW, it operates reliably at junction temperatures up to 150°C. The component is supplied in a PG-SOT343-3D package, commonly known as SC-82A, on a tape and reel. This device is suitable for use in telecommunications, radar systems, and other demanding RF circuitry requiring high performance and miniaturization.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 27dB |
| Power - Max | 160mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 25mA, 3V |
| Frequency - Transition | 42GHz |
| Noise Figure (dB Typ @ f) | 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-SOT343-3D |