BFP650E6327HTSA1
RF TRANS NPN 4.5V 37GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP650E6327HTSA1 is a high-performance NPN bipolar RF transistor designed for demanding applications. This surface-mount device operates at a collector-emitter breakdown voltage of 4.5V and can handle a maximum collector current of 150mA with a power dissipation of 500mW. It exhibits a transition frequency of 37GHz, making it suitable for high-frequency signal amplification and switching. The DC current gain (hFE) is a minimum of 110 at 80mA and 3V, with a typical gain ranging from 10.5dB to 21.5dB across its operating frequencies. Noise figure performance is excellent, with typical values between 0.8dB and 1.9dB from 1.8GHz to 6GHz. The transistor is housed in a PG-SOT343-3D (SC-82A, SOT-343) package and is supplied on tape and reel. This component is widely utilized in telecommunications infrastructure, satellite communications, and high-frequency test equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10.5dB ~ 21.5dB |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA, 3V |
| Frequency - Transition | 37GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-SOT343-3D |
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