BFP650
RF TRANS NPN 4.5V 37GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP650 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in a PG-SOT343-3D package (SC-82A, SOT-343), operates at a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 150mA. It exhibits a transition frequency of 37GHz, with a minimum DC current gain of 110 at 80mA and 3V. The transistor delivers a gain ranging from 10.5dB to 21.5dB and features a typical noise figure between 0.8dB and 1.9dB across the 1.8GHz to 6GHz frequency spectrum. With a maximum power dissipation of 500mW, the BFP650 is suitable for use in telecommunications, radar systems, and other demanding RF front-end designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 10.5dB ~ 21.5dB |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA, 3V |
| Frequency - Transition | 37GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-SOT343-3D |