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BFP640FE6327

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BFP640FE6327

RF TRANS NPN 4.5V 40GHZ 4TSFP

Manufacturer: Infineon Technologies

Categories: Bipolar RF Transistors

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The Infineon Technologies BFP640FE6327 is an NPN bipolar RF transistor engineered for high-frequency applications. This surface mount device operates with a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 50mA. It exhibits a minimum DC current gain (hFE) of 110 at 30mA and 3V, with a transition frequency reaching 40GHz. The transistor delivers a typical gain of 23dB and features a low noise figure, ranging from 0.65dB to 1.2dB across the 1.8GHz to 6GHz spectrum. Rated for a maximum power dissipation of 200mW, the BFP640FE6327 is housed in a 4-TSFP package and supplied on tape and reel. This component finds application in wireless communication systems, radar, and other demanding RF front-end designs.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, Flat Leads
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain23dB
Power - Max200mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 30mA, 3V
Frequency - Transition40GHz
Noise Figure (dB Typ @ f)0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Supplier Device Package4-TSFP

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