BFP640E6327BTSA1
RF TRANS NPN 4.5V 40GHZ SOT343-4Manufacturer: Infineon Technologies
Categories: Bipolar RF Transistors
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Infineon Technologies BFP640E6327BTSA1 is an NPN RF transistor designed for high-frequency applications. This component offers a 4.5V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 40GHz and a typical gain of 24dB, it is well-suited for demanding RF circuits. The noise figure is specified between 0.65dB and 1.2dB across the 1.8GHz to 6GHz range. Packaged in a PG-SOT343-3D (SC-82A, SOT-343) surface mount configuration, it operates at ambient temperatures up to 150°C (TJ). The minimum DC current gain (hFE) is 110 at 30mA and 3V. This transistor is utilized in industries such as telecommunications and wireless infrastructure. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 24dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
| Frequency - Transition | 40GHz |
| Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
| Supplier Device Package | PG-SOT343-3D |
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